首页> 外文会议>Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th >Fabrication of 1.55/spl mu/m In/sub 0.53/Ga/sub 0.47/As/In/sub 0.53/(Ga/sub 0.6/Al/sub 0.4/)/sub 0.47/As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

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Fabrication of 1.55/spl mu/m In/sub 0.53/Ga/sub 0.47/As/In/sub 0.53/(Ga/sub 0.6/Al/sub 0.4/)/sub 0.47/As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

机译：用InGaAlAs数字合金制备1.55 / spl mu / m In / sub 0.53 / Ga / sub 0.47 / As / In / sub 0.53 /（Ga / sub 0.6 / Al / sub 0.4 /）/ sub 0.47 / As SCH MQW激光器使用介电覆盖层的生长后快速热退火

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《Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th》|2002年|P.639-642|共4页
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Jac Su Yu; Jin Dong Song; Jong Min Kim;
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中图分类无线电电子学、电信技术;
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1. Bandgap tuning of In/sub 0.53/Ga/sub 0.47/As/InP multiquantum well structure by impurity free vacancy diffusion using In/sub 0.53/Ga/sub 0.47/As cap layer and SiO/sub 2/ dielectric capping [J] . Lee J.H., Si S.K. Electronics Letters . 1997,第13期

机译：使用In / sub 0.53 / Ga / sub 0.47 / As覆盖层和SiO / sub 2 /介电盖层通过无杂质空位扩散对In / sub 0.53 / Ga / sub 0.47 / As / InP多量子阱结构进行带隙调谐
2. Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga/sub 0.47/In/sub 0.53/As with p/sup +/-Ga/sub 0.47/In/sub 0.53/As cap layer [J] . Averin S.V., Kohl A. Electronics Letters . 1992,第11期

机译：n-Ga / sub 0.47 / In / sub 0.53 / As上具有p / sup +/- Ga / sub 0.47 / In / sub 0.53 / As盖层的低暗电流准肖特基势垒MSM光电二极管结构
3. Polarization insensitive 1.55-/spl mu/m optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells [J] . Seiferth F., Johnson F.G. IEEE Photonics Technology Letters . 1997,第10期

机译：具有GaAsδ应变Ga / sub 0.47 / In / sub 0.53 / As量子阱的对偏振不敏感的1.55- / splμ/ m光放大器
4. Fabrication of 1.55 /spl mu/m In/sub 0.53/Ga/sub 0.47/As/In/sub 0.53/(Ga/sub 0.6/Al/sub 0.4/)/sub 0.47/As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers [C] . Jae Su Yu, Jin Dong Song, Jong Min Kim, Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th . 2002

机译：用InGaAlAs数字合金制备1.55 / spl mu / m In / sub 0.53 / Ga / sub 0.47 / As / In / sub 0.53 /（Ga / sub 0.6 / Al / sub 0.4 /）/ sub 0.47 / As SCH MQW激光器使用介电覆盖层的生长后快速热退火
5. Device modeling, analysis and fabrication of Indium0.53Gallium0.47Arsenic field-effect transistors. [D] . Hwang, Eui Chul. 2012

机译：铟0.53镓0.47砷场效应晶体管的器件建模，分析和制造。
6. Studies of the Room-Temperature Multiferroic Pb(Fe0.5Ta0.5)0.4(Zr0.53Ti0.47)0.6O3: Resonant Ultrasound Spectroscopy Dielectric and Magnetic Phenomena [O] . J Schiemer, M A Carpenter, D M Evans, -1

机译：室温多铁性Pb（Fe0.5Ta0.5）0.4（Zr0.53Ti0.47）0.6O3的研究：共振超声光谱介电和磁现象
7. Quasi-Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+-Ga0.47In0.53As layer grown by molecular beam epitaxy [O] . C. Y. Chen 2012

机译：使用通过分子束外延生长的完全耗尽的p + -Ga0.47In0.53As层在n-Ga0.47In0.53As上形成准肖特基势垒二极管
8. Performance Characteristics of In(0.6)Ga(0.4)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistor Monolithically Integrated with In(0.53)Ga(0.47)As p-i-n Photodiodes [R] . Zebda, Y., Bhattecharya, P. K., Pavlidis, D., 1990

机译：In（0.6）Ga（0.4）as / In（0.52）al（0.48）作为调制掺杂场效应晶体管与In（0.53）Ga（0.47）as p-i-n光电二极管单片集成的性能特征

Fabrication of 1.55/spl mu/m In/sub 0.53/Ga/sub 0.47/As/In/sub 0.53/(Ga/sub 0.6/Al/sub 0.4/)/sub 0.47/As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

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