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Highly Reliable 40Gb/s Electroabsorption Modulator Grown on InP:Fe Substrate

机译：在InP：Fe衬底上生长的高度可靠的40Gb / s电吸收调制器

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The electroabsorption modulator with the unburied ridge waveguide has been fabricated on InP:Fe substrate. The cut-off frequency was 40GHz and the extinction ratio was 15dB. The estimated lifetime at 25°C was over 1.7X10~7 hours.

机译：具有未掩埋的脊形波导的电吸收调制器已在InP：Fe衬底上制造。截止频率为40GHz，消光比为15dB。在25°C下的估计寿命超过1.7X10〜7小时。

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《Optical fiber communication conference and exhibit;OFC 》|2001年|p.MJ2.1-2.3|共3页
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K.Takagi; H.Tada; E.Ishimura; T.Aoyagi; T.Nishimura; E.Omura;
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中图分类无线电电子学、电信技术 ;
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专利

1. Large electroabsorption effect in GaInAs/InP multiple quantum well (MQW) optical modulator grown by OMVPE [J] . Wood T.H., Carr E.C. Electronics Letters . 1988 ,第14期

机译：OMVPE生长的GaInAs / InP多量子阱（MQW）光调制器中的大电吸收效应
2. InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE [J] . Pathak R.N., Goossen K.W. IEEE Photonics Technology Letters . 1994 ,第12期

机译：InGaAs-InP P-1（MQW）-N表面正常电吸收调制器在气源MBE生长的1.55- / spl mu / m应用中显示出优于8：1的对比度
3. Zero-bias and low-chirp, monolithically integrated 10 Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate [J] . Sahlen O., Lundqvist L. Electronics Letters . 1996 ,第2期

机译：零偏置，低-，单片集成10 Gbit / s DFB激光器和电吸收调制器，位于半绝缘InP衬底上
4. Highly reliable 40Gb/s electroabsorption modulator grown on InP:Fe substrate [C] . K. Takagi, Y. Miyazaki, H. Tada, International Conference on Indium Phosphide and Related Materials . 2001

机译：在INP：Fe衬底上生长的高度可靠的40gB / S电吸收调制器
5. MOCVD Grown InP and Related Thin Films on Silicon Substrates for Electron and Photonic Devices Applications. [D] . Zhong, Zhenyu. 2010

机译：在电子和光子器件应用的硅基板上MOCVD生长的InP和相关薄膜。
6. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate [O] . Min Zhang, Zuoxing Guo, Liang Zhao, 2018

机译：缓冲剂类型对InP（100）衬底上生长的In0.82Ga0.18As外延层的影响
7. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate [O] . Min Zhang, Zuoxing Guo, Liang Zhao, 2018

机译：缓冲类型对INP（100）衬底生长的IN0.82GA0.18AS外延层的影响

Highly Reliable 40Gb/s Electroabsorption Modulator Grown on InP:Fe Substrate

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