Waveguide photodetectors for high speed digital communication systems

摘要

Waveguide p-i-n photodiodes are compared to top illuminated devices for high speed operation. A design approach for waveguide p-i-n photodetectors using a single epitaxial growth and common fabrication processes is presented and compared to measured results. Fabricated devices showing over 50 GHz bandwidth, 0.9 AAV pigtailed responsivity, 10 mA CW photocurrent handling and less than 0.1 dB polarization dependence are presented.