Development on SiGe/Si film heterojunction bipolar transistors

摘要

In the paper, development on MBE-based SiGe/Si heterojunction bipolar transistors (HBT) is described. The SiGe/Si film used in the present work was grown by SIVA 32 molecular beam epitaxy (MBE) system made n Riber, France. 3umm process technology with poly-silicon emitter was used to develop SiGe HBT devices. The experimental results indicated that both the direct current (DC) characteristics and the cutoff frequency of SiGe HBT are satisfactory. The current gain beta of HBT devices is 50, when the collector voltage V_c=2V and the collector current I_c=5mA. The cutoff frequency f_gamma=5.1 GH_z. And the uniformity of the cutoff frequency of HBT is quite good.