Low temperature poly-si TFT characteristics in the overlapped area of excimer laser long-axis scans

摘要

We have investigated the laser crystallized LT poly-Si TFT characteristics in the overlapped area of excimer laser scans in the long axis direction. Continuous TFTs located at the edges of single scan and overlaps of two scans were used. Different laser energy densities were dual-scanned to study the characteristics of the TFTs in overlapped area. It was found that the laser with higher energy density dominates the TFT characteristics, and their characteristics in the overlapped area can be as good as those in the non-overlapped area. Based on these results, large uniform LT poly-Si panel can be fabricated by overlapping the laser scans in the long axis direction.