Study on the hysteresis effect of pH-ISFET based on Beckman PHI ~(TM) 110 (Si_3N_4 gate pH-ISFET)

摘要

In this study, the commercial manufacture Beckamn PHI ~(TM) 110 (Si_3N_4 gate pH-ISFET) was acted as the sensitive membrane of pH-ISFET. The experimental results show that the Si_3N_4 material has a fairly high response, and the pH sensitivity was obtained 56.94 mV/pH in a concentration range between pH 1 and pH 11 at room temperature.