Amine control for DUV lithography: identifying hidden sources

摘要

The impact of airborne basic molecular contamination (MB) on the performance of chemically amplified (CA) resist systems has been a long standing problem~(1,2). Low ppb levels of MB may be sufficient for robust 0.25um lithography with today's advanced CA resit systems combined with adequate chemical air filtration. However, with minimum CD targets heading below 150nm, the introduction of new resist chemistries for Next Generation Lithography, and the trend towards thinner resists, the impact of MB at low and sub-ppb levels again becomes a critical manufacturing issue.