Strain-compensated InGaAs/InAlAs/InP pre-biased quantum well for polarization-insensitive and negative-chirp electro-absorption optical modulators

摘要

We have theoretically demonstrated that a strain-compensated InGaAs/InAlAs/InP pre-biased quantum well brings about both polarization-insensitive and negative-chirp operations simultaneously without additional insertion loss penalty in electro-absorption modulators. This is because the shallower conduction- and valence-band wells due to the strain-compensated structure enhances the spatial separation of electron and hole wavefunctions under relatively small electric field in the pre-biased quantum well.