Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition

摘要

On the basis of the experimental results of XPS analysis and the carrier separation, the band diagram and carrier transport mechanism in ZrO/sub 2/ dielectrics were clarified for the first time. ZrO/sub 2/-MIS structure consists of ZrO/sub 2/ layer and the interfacial Zr-silicate layer. The carrier conduction in ZrO/sub 2/ layer is dominant in the ZrO/sub 2//Zr-silicate/Si MIS structure. It was found that the hole conduction mechanism is different from electron conduction mechanism in ZrO/sub 2/ gate dielectrics.