ESD performance optimization of ballast resistor on power AlGaAs/GaAs heterojunction bipolar transistor technology

摘要

Key parameters in power Heterojunction Bipolar Transistors (HBT's) ESD design are identified. ESD survivability in forward bias stress is significantly affected by the ballast resistor design, while in reverse bias it is the peak stress current. Optimization in the design of ballast resistors should enhance both forward and reverse bias stress.