A simple method to extract the oxide charge density at the buried oxide/substrate interface in soi capacitor

摘要

In this work is proposed a new method to obtain the effective oxide charge density in the buried oxide/substrate interface by the high frequency Capacitance vs. Voltage (C-V) curve from Silicon-On-Insulator (SOI) capacitors. MEDICI simulations were performed to validate the proposed method. The sensibility of the proposed method is also evaluated. Experimental application of this method was done resulting in a coherent value.