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Radiation damage in the Chandra X-ray CCDs

机译:Chandra X射线CCD的辐射损伤

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Front side illuminated CCDs comprising focal plane of Chandra X-ray telescope have suffered some radiation damage in the beginning of hte mission., Measurments of CTI and dark current at differetn temperatures led us to conclusion that hte type of damage is inconsistent with the much studied type of damage created by protons with energies higher than 10 MeV. Intensive ground based investigation shwoed that irradiation of CCD with low energy protons (about 100 keV) results in the device characteristics very similar to the ones of the flight chips (very lo dark current, the shape of hte CTI temperature dependence). We were able to reliably determien that only image section of the flight chips was damaged and therefore only fast transfer from image to frame store section was affected. We have developed several techniques in order to determine the parameters of the electron traps introduced into hte transfer channel of the irradiated device. One of them is based on the analysis of the amplitude of the signal in the pixels trailing the pixel that absorbed an X-ray phton of known energy. Averaging over large number of photons allowed us to get high signal/noise ratio even for pixels with extremely low signal far behind the X-ray event. Performing this anlaysis at different temperatures we were able to measure trap density, emission time constant, and trap cross section. Another technique is based on the analysis of the tail behind the events of very high amplitude, such as cosmic ray hits.
机译:在HTE任务开始时,包括Chandra X射线望远镜的焦平面的前侧发光CCD遭受了一些辐射损伤。,CTI和暗电流在不同的温度下测量,我们得出结论,HTE类型的损坏类型与大量研究不一致质子产生的损坏类型,其能量高于10 mev。基于密集的地面调查Shwoed将CCD的辐射与低能量质子(约100keV)照射导致器件特性与飞行芯片(非常LO暗电流,HTE CTI温度依赖性的形状)非常相似。我们能够可靠地确定飞行芯片的图像部分损坏,因此只有从图像到帧存储部分的快速转移。我们开发了几种技术,以确定引入照射装置的HTE转移通道中的电子阱的参数。其中一个基于对落后像素的像素中的信号的幅度的分析,该像素吸收了已知能量的X射线Phton。平均在大量的光子上允许我们获得高信号/噪声比,即使对于远远超过X射线事件的信号极低的像素也是如此。在不同温度下执行该Anlaysis,我们能够测量陷阱密度,发射时间常数和陷阱横截面。另一种技术基于对非常高幅度的事件后面的尾部的分析,例如宇宙射线命中。

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