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Exciton/free-carrier radiative emission ratio and temperature dependence of exciton lifetime for CdZnSSe/ZnSSe single quantum wells

机译:CdZnSSe / ZnSSe单量子阱的激子/自由载流子辐射发射率和激子寿命的温度依赖性

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Abstract: The time-integrated and time-resolved photoluminescence (PL) of Cd$-0.3$/Zn$-0.7$/S$-0.06$/Se$-0.94$//ZnS$-0.06$/Se$- 0.94$/ single quantum wells (QW) have been studied at various temperatures. The time-resolved PL is obtained by sum frequency conversion technique with 300 fs resolution. The PL line shape analysis based on a simple statistical model including both excitons and free-carriers showed that free exciton radiative recombination dominates the PL emission even at room temperature. However, free-carrier recombination contributed significantly to the emission spectrum down to 77 K. The free excitons are stable up to room temperature because of the large exciton binding energy and strong confinement of electrons and holes in these QWs. The free exciton decay time is approximately 300 ps at 130 K and it increases linearly to 1 ns at 295 K. This is the first time that exciton radiative recombination and linear temperature dependence of exciton lifetime is observed up to room temperatures for wide-gap II-VI QWs. This is due to the excellent quality of the samples and the strong confinement of electrons and holes in the QWs studied. This linear increase in exciton lifetime with temperature agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination for excitons in QW.!35
机译:摘要:Cd $ -0.3 $ / Zn $ -0.7 $ / S $ -0.06 $ / Se $ -0.94 $ // ZnS $ -0.06 $ / Se $-0.94的时间积分和时间分辨光致发光(PL)已经在各种温度下研究了单量子阱(QW)。通过总和频率转换技术以300 fs的分辨率获得时间分辨的PL。基于包括激子和自由载流子的简单统计模型的PL线形分析表明,即使在室温下,自由激子的辐射复合也主导着PL的发射。然而,自由载流子的重组对低至77 K的发射光谱做出了重大贡献。由于这些激子中的激子束缚能大,并且电子和空穴的局限性强,自由激子在室温下稳定。自由激子的衰减时间在130 K时约为300 ps,在295 K时线性增加至1 ns。这是宽间隙II首次观察到激子辐射复合和激子寿命的线性温度依赖性。 -VI QW。这是由于样品的优异质量以及所研究的量子阱中电子和空穴的强烈限制。激子寿命随温度的线性增加与理论预测相符,考虑了量子阱中激子的辐射复合的动量需求守恒!35

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