首页> 外文会议>Conference on photomask and X-Ray mask technology >Electron-beam lithography simulation for mask making: III. Effect of spot size address grid and raster writing strategies on lithography performance with PBS and ZEP-7000
【24h】

Electron-beam lithography simulation for mask making: III. Effect of spot size address grid and raster writing strategies on lithography performance with PBS and ZEP-7000

机译:掩模制造的电子束光刻仿真:III。点尺寸地址网格和光栅写入策略对PBS和ZEP-7000光刻性能的影响

获取原文

摘要

Abstract: This paper examines, from a modeling perspective, the effects of spot size, data address and raster writing strategy on lithographic performance. Both PBS, the current U.S. standard for mask making, and ZEP 7000, a new, much higher contrast material, will be examined for their impact on lithographic quality. Simulation is used to demonstrate the differences between resists, writing strategies and their implementation. !11
机译:摘要:本文从建模角度研究了光斑大小,数据地址和光栅写入策略对光刻性能的影响。将检查当前美国掩模制造标准PBS和新的,对比度更高的新型材料ZEP 7000对光刻质量的影响。仿真用于演示抗蚀剂,写入策略及其实现之间的差异。 !11

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号