Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors

摘要

Abstract: Mechanisms of incorporation of native defect and dopants in HgCdTe alloys are reviewed. Origin of the native defect related deep centers in limiting the minority carrier lifetime is explored. Primary and secondary mechanisms operative in the activation of n type and p type dopants in HgCdTe are discussed along with implications for fabrication of high performance detectors. !13