Fabrication Method of Surface Passivation Layer on HgCdTe for Infrared Sensor

摘要

the present invention is used in the semiconductor HgCdTe infrared photoelectric sensing element to produce tooling as ZnS, CdS, such as sulfur ( S) to form a surface coating of a material containing an element through the surface treatment of the substrate to a method for forming a surface protective layer having an electrical characteristic of good quality. ; to form a surface protective film of the method of the present invention HgCdTe is a step for wet-etching the semiconductor surface to remove a native oxide film on the semiconductor surface, a wet etching process that HgCdTe semiconductor surface comprising a surface treated with a sulfur-containing solution to form a sulfide layer on the surface material and the sulphide material surface layer is formed depositing a ZnS or CdS on and a step of forming a surface protective layer. ; In accordance with the present invention, the surface of good quality which can significantly reduce a surface leakage current when producing a photoelectric device using a pressure type HgCdTe it is possible to obtain a protective layer.