Rapid thermal processing of implanted GaN up to 1500 degree

摘要

GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 degree using AlN encapsulation. No redistribution was measured by SIMS for any of the depants and effective diffusion coefficients are <2x10 sup -13 cm sup 12, s sup -1 at 1400 degree, except Be, which displays damage-enhanced diffusion at 900 degree and is immobile once the point defect concentration is removed. Activation efficiency of -90