High deposition rate amorphous silicon solar cells and thin film transistors using the pulsed plasma pecvd technique

摘要

The pulsed plasma technique has been shown to increase the depositon rate without an increase in the particulate count in the plasma wihich is an important factor determining the yield of ocmmercial products such as active matrix displays.In this paper,we report the deposition of amorphous silicon at deposition rates of up to 15 A/sec,using a modulation frequency in the range of 1-100 kHz.