Enhaced crystallinity of microcrystalline silicon thin films using deducterium in treactive manetron sputter depositions at 230 deg C

摘要

We analyze the formaiton kinetics and microstructure of hydrogenated vs.deuterated microcrystalline (uc-Si:H or D) thin films using real-time spectroscopic ellipsometry,post deposition thermal hydrogen evoluatin,and TEM.The films are deposited by reactive magnetron sputtering of a siliction target in Ar (1.65 mT) With addoe dpartial pressures of H_2 or D_2(0-5.5mT) on Corning 7059 glass substrates at 230 deg C.