Physically based models of high power semiconductor devices for PSpice

摘要

For the design of efficient and reliable converters, circuit simulation can be a powerful tool, if suitable semiconductor models exist. Unfortunately most of the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and GTO-thyristors. They are based on semiconductor physics, which guarantees a wide range of validity. The models are programmed in the C++ language and are implemented in the widely used circuit simulator Microsim PSpice using the device equation options. The simulation results are compared with measurements.