Creation of nanoelectronic devices by focussed ion beam implantation

摘要

In contrast to the fabrication of integrated circuits by current photolithography, a direct exposure of ions is proposed. This can be done by the very flexible means of focussed ion beam technology or by the more throughput-oriented ion beam projection. The applicability of the proposed ion beam implantation is demonstrated by prototypes of field-effect transistors, ohmic and active loads and the potential ability of arbitrarily implanted ion beam patterns. This was demonstrated to be feasible both on GaAs and on Si.