The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an indium phosphide (InP) scaled heterojunction bipolar transistor (HBT) technology which has the potential for very high performance analog and digital operation. Preliminary results from HRL show that the f/sub T/ of the devices can be improved from 90 GHz for the HRL InP standard (2 micron emitter) HBT technology to approximately 180 GHz for this scaled (1 micron emitter) HBT technology. Mayo has designed several digital circuits in this scaled technology, the initial test results for which are reported in this paper.
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机译:梅奥基金会专用处理器开发小组(Mayo)和HRL实验室(HRL)正在开发电路,以磷化铟(InP)规模的异质结双极晶体管(HBT)技术实现该电路,该技术具有非常高性能的模拟和数字操作潜力。 HRL的初步结果表明,器件的f / sub T /可以从HRL InP标准(2微米发射器)HBT技术的90 GHz改善到此规模(1微米发射器)HBT技术的大约180 GHz。 Mayo在这种规模化技术中设计了数个数字电路,其初步测试结果已在本文中进行了报道。
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