A charge sensitive readout chain has been designed and fabricated in commercial available 0.8 /spl mu/m CMOS technology. The readout chain is optimized for soft X-ray pixel detectors measuring energies up to 20 keV. The dual mode of operation is controlled by external digital signal. There is the ability of generating either an analog voltage signal proportional to input charge or a voltage step with the same amplitude of previous signal, if a holding feature is required. The readout chain consists of a charge amplifier, a shaper, an operational amplifier which can either operates as a voltage amplifier or a peak detector and an output buffer. The designed area is 270 /spl mu/m/spl times/150 /spl mu/m. The gain at the shaper output is 378 mv/fC, the ENC is 16 e/sup -/ r.m.s. at 160 ns shaping time. The overall gain is 557 mV/fC, the ENC is 13 e/sup -/ r.m.s. with 240 ns peaking time and 1.4 /spl mu/s recovery time. The overall power dissipation is 1.5 mW with a load capacitance of 25 pF.
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机译：电荷敏感的读出链已通过商用0.8 / spl mu / m CMOS技术进行了设计和制造。读取链针对软X射线像素检测器进行了优化，该检测器可测量高达20 keV的能量。双操作模式由外部数字信号控制。如果需要保持功能，则可以生成与输入电荷成比例的模拟电压信号，也可以生成具有与先前信号相同幅度的电压阶跃。读出链由电荷放大器，整形器，可以用作电压放大器或峰值检测器的运算放大器和输出缓冲器组成。设计面积为270 / spl mu / m / spl倍/ 150 / spl mu / m。整形器输出的增益为378 mv / fC，ENC为16 e / sup-/r.m.s。在160 ns的整形时间。总增益为557 mV / fC，ENC为13 e / sup-/ r.m.s.峰值时间为240 ns，恢复时间为1.4 / spl mu / s。负载电容为25 pF时，总功耗为1.5 mW。
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