Analysis of tunneling currents and reliability of NMOSFETs with sub-2 nm gate oxides

摘要

This work examines different components of direct tunneling currents and analyzes the oxide reliability in scaled NMOSFETs with ultrathin gate oxides (1.4-2 nm). It concludes that the source/drain extension to the gate overlap regions have strong effects on the device performance in terms of both gate tunneling currents and oxide reliability.