An in-line contact and via hole inspection method using electron beam compensation current

摘要

In-line contact and via hole inspection technology will play a vital role in ensuring accelerated yield ramps and quickly identifying and resolving yield excursions in the SOC era. We have developed an in-line contact and via hole inspection method using electron beam compensation current. This method will provide a nondestructive contact and via hole inspection tool with a thickness measurement capability for the hole bottom nm order SiO/sub 2/ film and the hole diameter measurement capability as well as performing a super high inspection speed at over 1000 times faster than a SEM-based method.