Monte Carlo simulation of quantum yields exceeding unity as a probe of high-energy hole scattering rates in Si

摘要

High-energy hole scattering rates for a full band Monte Carlo simulation in Si are verified using the quantum-yield experiment. We compare two models that yield the correct velocity-field and ionization coefficient characteristics but quite different energy distributions. It is demonstrated that quantum yields exceeding unity can be used as a probe of hole scattering rates in Si; the model based on ab initio impact ionization rate shows goad agreement With the experiments.