Line inductance extraction and modeling in a real chip with power grid

摘要

A realistic power grid and pseudo-random signal lines connected to on-chip drivers are included for accurate extraction of the parasitic inductance in a 5-metal layer 0.25-/spl mu/m CMOS technology. A new ring oscillator for the extraction of signal delay and characteristic impedance is demonstrated. The increase of signal delay due to mutual inductance of clock lines is measured directly with S-parameter characterization techniques.