Very high performance 50 nm CMOS at low temperature

摘要

In this work, we present very high performance CMOS devices with 50 nm channel lengths on 1.7 nm gate oxide, suitable for low temperature operation. Saturation transconductances of 1380 mS/mm for nMOSFETs and 523 mS/mm for pMOSFETs are achieved at -200 /spl deg/C. At the same temperature, I/sub on/ for a 1.2 V supply is 1.2 mA//spl mu/m for nMOSFET, and 0.5 mA//spl mu/m for pMOSFET, respectively, with I/sub off/ of both devices on the order of 10 nA//spl mu/m. A delay of 6.4 ps per stage at 1.5 V is measured at -100 /spl deg/C for a 101-stage CMOS ring oscillator. The delay of the same ring oscillator at room temperature is 8.2 ps per stage. These represent the highest CMOS performance figures reported to date.