An optimised integrated bipolar magnetotransistor

摘要

an integrated bipolar magnetortransistor based on enhanced mdoulation of emitter injection and carrier deflection is presented. The absolute magnetorsensitivity of the device is about 5 mV/mT. The relative magnetosensitivity is in the range 3-5T~(-1) at collector currents of the order of 0.5 ma. Between the magnetic field and the ouput sigjnal exists a linear dependence for crtain biasing conditions.