Adjusting of pMOS dosimeter characteristics by electrical biases under irradiation

摘要

The goal of this work is the detailed investigation of electrical biases and dose rate infleucnes on standard pMOS transistor characteristics and the subsequent optimisation of a pMOS dosimeter for low dose rate application. Basing on obtained results, we came to the conclusion that the increase in measurement dose range 5-10 times can be obtained by electrical bias optimisation only. The use of dynamical electrical regime allows to decrease radiation induced charge relaxation in the pMOS dosimeter.