The paper investigates a possibility of pMOS dosimeter re-use for the measurement of gamma-ray irradiation. The dosimeters were irradiated to the dose of 35 Gy, annealed at room and elevated temperatures, after which they were irradiated again to the same dose value. Changes in the threshold voltage shift during those processes were followed, and it was shown that their re-use depends on a gate polarization during irradiation. For the gate polarization of 5 V during irradiation the pMOS dosimeters can be re-used for measurements of the irradiation dose after annealing without prior calibration. The pMOS dosimeters with the gate polarization during irradiation of 2.5 V can also be re-used for irradiation dose measurements but they require calibration. It is shown that for their re-use it is necessary to anneal the pMOS dosimeter so that the fading is higher than 50%. [Projekat Ministarstva nauke Republike Srbije, br. 171007]
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机译：本文研究了将pMOS剂量计重新用于伽马射线辐照测量的可能性。将剂量计辐照至35 Gy的剂量，在室温和高温下退火，然后再辐照至相同的剂量值。跟踪了这些过程中阈值电压偏移的变化，结果表明它们的重新使用取决于照射过程中的栅极极化。对于辐照期间5 V的栅极极化，可以在不事先校准的情况下将pMOS剂量计重新用于退火后的辐照剂量测量。在2.5 V辐照期间具有栅极极化的pMOS剂量计也可以重新用于辐照剂量测量，但是它们需要校准。结果表明，为使它们重新使用，有必要对pMOS剂量计进行退火，以使褪色高于50％。 [Projekat Ministarstva nauke Republike Srbije，br。 171007]
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