GAMMA-RAY IRRADIATION AND POST-IRRADIATION AT ROOM AND ELEVATED TEMPERATURE RESPONSE OF pMOS DOSIMETERS WITH THICK GATE OXIDES

摘要

Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold Ⅰ-Ⅴ curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.%Истраживан jе одзив радиjационо осетливих pMOS транзистора чиjе су деблине оксида 100 nм и 400 nм током гама зраче(н)а и касниjег опоравка на со6ноj и повншноj температури. Одзив ових транзистора jе пра(h)ен на основу промене напона коjн jе проце(н)иван из преносних карактеристика у сатурациjи. Присуство центара у оксиду управлачке електроде као и центара на ме(ъ)уповршини силициjум-силициjумдиоксид, коjн доводе до промене напона прага, проце(н)ивани су техником коjа користи претпраговске струно-напонске криве. Показано jе да доминантну улогу у промени напона прага током озрачива(н)а и касниjе опоравка имаjу центри захвата у оксиду геjта.