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Grain growth by DIGM in Ni thin film under high tensile stress

机译:高拉伸应力下Ni薄膜中DIGM对晶粒的生长

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摘要

Electron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.
机译:发现电子束蒸发的Ni薄膜具有1.2Gpa的拉伸应力。加热后应力得以缓解,并伴随晶粒长大。计算出的应力与实验结果吻合,提出了晶粒长大的机理。

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