Adhesion energy measurements of multilayer low-K dielectric materials for ULSI applications

摘要

Currently, the IC industry is reseaching the integration of a variety of materials to meet the low dielectric constant requirement for improved back-end of line (BEOL) interconnect performance. One critical dimension for successful integration of these new materials is maintaining mechanical integrity through multilayer processes. This includes both cohesive and adhesive fracture resistance. The latter adds additional complexity in that adhesive toughness is a function of the adherend materials and teh processes used to join them. Hence, many good dielectric materials may be prematurely eliminated from further research not because of inherently poor adhesion but because of the necessity to optimize processing strategies.