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New method to enhance the low-level detection limit of radiometric-quality photovoltaic and photoconductive IR detectors

机译:增强辐射质量光电和光电导红外探测器的低水平探测极限的新方法

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Abstract: The low level detection of photoconductive and photovoltaic detectors is influenced by their dark current and their impedance, by the change of these parameters during a measurement in connection with the attached electronic circuit. Photoconductive detectors are generally biased by a constant voltage through a resistance. Without radiation the voltage on the detector produces dark current by the help of thermally generated and injected carriers. When incident light falls on the surface of the detector carriers are generated either by band-to-band transitions or transitions involving forbidden gap energy levels. This changes the conductivity and by it the voltage drop on the detector which results in a change of the thermal load of the detector and that of the original dark current. This way a distinction between the change of the dark current the effect of impedance on the measuring circuit and the radiation-generated current can not be made. Photovoltaic detectors for radiometric quality measurements are used in the short circuit mode. Light absorption in a photodiode produces electron-hole pairs. Pairs generated either in the depletion region or in a region from where a carrier can eventually diffuse to the depletion region will produce a current flow in the external circuit. The same is produced by thermally generated carriers, too. Generally a non-ideal short circuit is used, a change in the measured current slightly changes the voltage on the photodiode resulting in a small deterioration of the field structure within the diode. This changes both the recombination rate at the different layers of the diode and the collection factor causing a change in the dark current. The change of the dark current means the change of the impedance and this deviation can strongly influence the measurement results. At low level measurements this change of the dark current and that of the impedance can at either type of detector be critical. The bootstrapping of the detectors practically eliminates this problem, this solution is analyzed. !7
机译:摘要:光电导检测器和光电检测器的低电平检测受暗电流和阻抗的影响,在与连接的电子电路连接的测量过程中,这些参数的变化会对其产生影响。光电导检测器通常通过电阻通过恒定电压偏置。在没有辐射的情况下,检测器上的电压会通过热产生和注入的载流子产生暗电流。当入射光落在检测器的表面上时,通过带间跃迁或涉及禁带能级的跃迁产生载流子。这会改变电导率,从而改变检测器上的电压降,从而导致检测器的热负荷和原始暗电流的热负荷发生变化。这样就无法在暗电流的变化,阻抗对测量电路的影响与辐射产生的电流之间进行区分。在短路模式下使用用于辐射质量测量的光伏检测器。光电二极管中的光吸收会产生电子-空穴对。在耗尽区或载流子最终扩散到耗尽区的区域中产生的对将在外部电路中产生电流。热产生的载体也产生相同的结果。通常,使用非理想的短路,测量电流的变化会稍微改变光电二极管上的电压,从而导致二极管内场结构的劣化很小。这既改变了二极管不同层的复合率,又改变了引起暗电流变化的收集因子。暗电流的变化意味着阻抗的变化,这种偏差会严重影响测量结果。在低电平测量时,暗电流和阻抗的这种变化在两种类型的检测器中都是至关重要的。检测器的自举实际上消除了这个问题,对此解决方案进行了分析。 !7

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