Application of development-free vapor photolithography in etching silicon nitride

摘要

Abstract: A new dry etching technique - development-free vaporphotolithography was used to transfer pattern onsilicon nitride film. Plasma enhanced chemical vapordeposition silicon nitride film and thin low pressurechemical vapor deposition silicon nitride film can beetched to get positive pattern. The difference ofetching rate between exposed area and unexposed areawas attributed to the concentration difference ofaccelerators which was realized through photochemicalreaction. The reaction mechanism and other phenomenahave also been discussed. !15