Electromigration lifetime tests on TiN-Ti-AlCu-TiN-Ti stacked structures with various upper Ti film thicknesses have been carried out on two-level interconnect structures connected with W-plugs. We found that a high electromigration resistance was obtained with thin Ti, resulting in an island shaped Al/sub 3/Ti intermetallic. This result is inconsistent with a well-known bypass model. We propose a new model in which the Al/sub 3/Ti-Al interface mass transport is faster than that of others.
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机译：已经在与W形插头连接的两级互连结构上对具有各种上部Ti膜厚度的TiN-Ti-AlCu-TiN-Ti堆叠结构进行了电迁移寿命测试。我们发现，使用薄的Ti可以获得较高的电迁移电阻，从而形成岛状的Al / sub 3 / Ti金属间化合物。该结果与众所周知的旁路模型不一致。我们提出了一种新的模型，其中Al / sub 3 / Ti-Al界面的质量传输比其他模型更快。
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