Low threshold 1.3 /spl mu/m InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy

机译：使用气源分子束外延生长的n型调制掺杂的低阈值1.3 / spl mu / m InAsP MQW激光器

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We investigated the effect of n-type modulation doping as well as growth temperature on the threshold current density of 1.3 /spl mu/m InAsP strained MQW lasers grown by gas-source MBE (GSMBE) for the first time and have obtained threshold current density as low as 250 A/cm/sup 2/ for 1200 /spl mu/m long devices.

机译：我们研究了N型调制掺杂的效果以及第一次通过气源MBE（GSMBE）生长的1.3 / SPL MU / M不适用的阈值电流密度的生长温度并获得阈值电流密度低至250A / cm / sup 2 /对于1200 / SPL MU / M长器件。

著录项

来源
《Indium Phosphide and Related Materials, 1998 International Conference on》|1998年|P.717-720|共4页
会议地点
作者
Shimizu; H.; Kumada; K.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Low threshold 1.3 /spl mu/m InAsP n-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy [J] . Shimizu H., Kumada K. Electronics Letters . 1998,第9期

机译：气源分子束外延生长的低阈值1.3 / spl mu / m InAsP n型调制掺杂MQW激光器
2. 1.3-/spl mu/m InAsP n-type modulation-doped MQW lasers grown by gas-source molecular beam epitaxy [J] . Shimizu H., Kumada K. IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：气体源分子束外延生长的1.3 / splμm/ m InAsP n型调制掺杂MQW激光器
3. Submilliampere threshold current in 1.3 /spl mu/m InAsP n-type modulation doped MQW lasers grown by gas source molecular beam epitaxy [J] . Shimizu H., Kumada K. Electronics Letters . 1998,第16期

机译：气源分子束外延生长的1.3 / spl mu / m InAsP n型调制掺杂MQW激光器中的亚毫安阈值电流
4. Low threshold 1.3 /spl mu/m InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy [C] . Shimizu H., Kumada K., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 1998

机译：低阈值1.3 / SPL mu / m使用通过气源分子束外延生长的n型调制掺杂的MQW激光器
5. Ultra-high B doping during Si(1-x)Ge(x)(001) gas-source molecular-beam epitaxy: A mechanistic study of layer growth kinetics, dopant incorporation, electrical activation, and carrier transport. [D] . Glass, Glenn Aaron. 1999

机译：Si（1-x）Ge（x）（001）气源分子束外延期间的超高B掺杂：层生长动力学，掺杂剂掺入，电激活和载流子传输的机理研究。
6. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Łukasz Gelczuk, Jan Kopaczek, Thomas B. O. Rockett, -1

机译：分子束外延在低温下生长的n型GaAsBi合金的深层缺陷及其对光学性能的影响
7. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currentsud [O] . Liu H.Y., Childs D.T., Badcock T.J., 2005

机译：高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器，具有极低的连续波室温阈值电流 ud
8. Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 (mu)m Fabry-Perot optical modulators [R] . Hammons, B E, Fritz, I J, Brennan, T M, 1992

机译：通过分子束外延生长的应变松弛InGaas缓冲层，用于1.3（μm）法布里 - 珀罗光调制器

Low threshold 1.3 /spl mu/m InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅