High-efficient dual-junction InGaP/GaAs solar cells with improved tunnel interconnect

摘要

We report improvements of the InGaP-GaAs tandem cell performance by introducing an InGaP tunnel junction with sandwiched AlInP layers. A high conversion efficiency of 30.28% was achieved for 2 cm/spl times/2 cm cell, which is the world record for the terrestrial sun-light condition. The uniformity of the tandem solar cell was also improved.