Effects of thermal annealing on InAsP/GaInP strain-compensated multiple quantum wells

摘要

In this paper, we investigate the effects of annealing on 30-period strain-compensated InAs/sub 0.41/P/sub 0.59//Ga/sub 0.13/In/sub 0.87/P MQWs annealed at different temperatures up to 630/spl deg/C for 30 minutes. High resolution X-ray rocking curves show no difference between as-grown and annealed samples. The room-temperature photo-luminescence (PL) intensity increases with increasing annealing temperature up to 570/spl deg/C and then decreases. PL at 4 K shows that a new peak appears on the lower-energy side of the exciton peak. The power- and temperature-dependence of the PL suggests that it be reasonable to attribute the new peak to some defect-related transitions. These defects do not affect the absorption properties, however, photocurrent measurements of the as-grown and the 600/spl deg/C-annealed samples show that there is no observable difference between the electroabsorption properties of these samples.