首页> 外文会议>Indium Phosphide and Related Materials, 1998 International Conference on >Ultrafast all-optical switching at 1.3 /spl mu/m/1.55 /spl mu/m using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
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Ultrafast all-optical switching at 1.3 /spl mu/m/1.55 /spl mu/m using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

机译:使用新型InGaAs / AlAsSb / InP耦合双量子阱结构进行子带间跃迁,以1.3 / spl mu / m / 1.55 / spl mu / m的超快全光切换

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摘要

A coupled double quantum well (C-DQW) structure enabling ultrafast, multi-wavelength, all-optical modulation using intersubband transitions is proposed. It has been shown from the calculation of absorption spectrum and relaxation characteristics that the InGaAs/AlAsSb C-DQW structure is desirable for applications in all-optical switches for multi-wavelength operation at near-infrared wavelengths down to 1.3 /spl mu/m. The capability of ultrafast all-optical switching/wavelength conversion between 1.3 /spl mu/m and 1.55 /spl mu/m has also been shown.
机译:提出了一种耦合的双量子阱(C-DQW)结构,从而实现超快,多波长,使用IntersubBand转换的全光调制。从计算吸收光谱和弛豫特性的计算中已经显示了InGaAs / Alassb C-DQW结构对于在近红外波长下的多波长操作中的所有光学开关中的应用,以1.3 / SPL MU / m的应用。还显示了超快全光开关/波长转换的能力,也显示了1.3 / SPL MU / M和1.55 / SPL MU / M。

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