An experimentally-based DC model for the Bi-MOS structure and its adaptation to a circuit simulation environment

摘要

This paper presents an experimentally-based model that can accurately describe the hybrid-mode operation of deep submicron LDD p-MOSFETs in a circuit environment. Unified equations for the MOS, bipolar, and space charge currents of the Bi-MOS structure were derived and later adapted to meet the circuit simulation requirements.