Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China

机译：中国国家红外物理实验室HgCdTe表征与性质研究的最新进展

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Abstract: The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless nd nondestructive methods such as the IR, far-IR and millimeter wave measurements. This paper reports a portion of these new results. !24

机译：摘要：最近，我们在实验室中通过光致发光，磁光导率，量子学等方法研究了未掺杂和掺入Sb，As，Fe的块状和外延HgCdTe（MCT）材料的杂质，缺陷，均匀性和一些基本性能的表征。电容光谱，传输测量和其他非接触式非破坏性方法，例如IR，远红外和毫米波测量。本文报告了这些新结果的一部分。！24

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《Material Science and Material Properties for Infrared Optoelectronics》|1997年|p.30-38|共9页
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Junhao Chu; Shanghai Institute of Technical Physics; Shanghai; China; Kun Liu; Shanghai Institute of Technical Physics; Shanghai; China; Young Chang; Shanghai Institute of Technical Physics; Shanghai; China; Pu L. Liu; Shanghai Institute of Technical Physics; Shanghai; China; Biao Li; Shanghai Institute of Technical Physics; Shanghai; China; Shaoling Guo; Shanghai Institute of Technical Physics; Shanghai; China; Minghui Chen; Shanghai Institute of Technical Physics; Shanghai; China; Dingyuan Tang; Shanghai Institute of Technical Physics; Shanghai; China.;
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中图分类无线电电子学、电信技术;
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Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China

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