Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China

摘要

The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless nd nondestructive methods such as the IR, far-IR and millimeter wave measurements. This paper reports a portion of these new results.