Abstract: We discuss theoretical predictions for the gain spectra in GaN-based lasers from the point of view of adequate modeling, aimed at optimization of the laser structure and cavity parameters. The Coulomb enhancement effect is included, and it is shown that it leads to an increase of both the gain cross-section and the threshold current in edge-emitting lasers, due to shortening of carrier lifetime. The minimum threshold current density in such lasers with bulk active regions is estimated to be between 2 and 4 kA/cm$+2$/ at room temperature. !38
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机译：摘要：从足够建模的角度讨论了基于GaN的激光器中增益光谱的理论预测，旨在优化激光结构和腔参数。包括库仑增强效果，并且示出了由于载体寿命缩短，它导致边缘发射激光器中的增益横截面和阈值电流的增加。具有散装有源区的这种激光器中的最小阈值电流密度估计为2至4ka / cm $ + 2 $ /室温。 ！38
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