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Polarization characterization of self-imaging GaAs/AlGaAs waveguide beamsplitters using Mueller matrix imaging polarimetry

机译:使用Mueller矩阵成像旋光法自成像GaAs / AlGaAs波导分束器的偏振特性

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Abstract: Mueller matrix imaging polarimetry represents a novel means of characterizing the polarization effects of optoelectronic devices. The Mueller matrix contains the complete polarization properties of a sample, and can therefore be used to calculate properties such as phase retardance, polarization dependant losses and polarization crosstalk. The complete polarization properties of a series of GaAs/AlGaAs self-imaging waveguide beamsplitters were measured with an imaging Mueller matrix polarimeter. Polarization properties were mapped across high resolution images of the devices' outcoupling faces, and the uniformity of the polarization properties was measured. Properties investigated include magnitude and orientation of linear retardance, polarization dependant losses, and crosstalk between TE and TM modes. !4
机译:摘要:Mueller矩阵成像偏振法代表了一种表征光电子器件偏振效应的新颖方法。 Mueller矩阵包含样本的完整偏振特性,因此可以用来计算诸如相位延迟,偏振相关损耗和偏振串扰之类的特性。使用成像Mueller矩阵旋光仪测量了一系列GaAs / AlGaAs自成像波导分束器的完整偏振特性。将偏振特性映射到设备外耦合面的高分辨率图像上,并测量偏振特性的均匀性。研究的特性包括线性延迟的大小和方向,与偏振有关的损耗以及TE和TM模式之间的串扰。 !4

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