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Calculation and simulation of intensity distribution of uniform-illumination optical systems for submicron photolithography

机译:亚微米光刻均匀照明光学系统强度分布的计算与仿真

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Abstract: In this paper, the principle of two typical i-line ($lambda $EQ 365 nm) and excimer laser ($lambda $EQ 248 nm) uniform illumination optical systems based on Cohler illumination is reviewed, the principle and method of the calculation and simulation of intensity distribution of the illumination system for sub-micron photolithography consisting of aspherical surfaces, non-co-axial surfaces and lens array are put forward, that is ray-tracing based on the Snell theorem and spot diagram. At the same time, a program CALOSD made by us is described, two typical results of calculation and simulation of intensity distribution of illumination optical systems are given.!3
机译:摘要:本文综述了基于Cohler照明的两种典型i线(λlambda$ EQ 365 nm)和准分子激光($ lambda $ EQ 248 nm)均匀照明光学系统的原理,提出了其原理和方法提出了由非球面,非同轴表面和透镜阵列组成的亚微米光刻照明系统强度分布的计算和仿真,即基于斯涅尔定理和点图的光线追踪。同时描述了我们制作的程序CALOSD,给出了照明光学系统强度分布的计算和仿真的两个典型结果。!3

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