Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free

摘要

Abstract: SiO$-x$/N$-y$/ for micro- and optoelectronics is obtained from low-pressure vapor deposition reaction induced by a novel flash lamp which irradiates a precursor mixture NH$- 3$//SiH$-4$//N$-2$/O in deep ultraviolet (160 - 260 nm) and IR. Amorphous thin films are resulted within the composition of silicon oxynitride. Flow ratio of precursors and flashtubes were varied to produce a range of x and y. The detailed properties have been investigated using ellipsometry, infrared absorption, auger electron spectroscopy, and atomic force microscope. The hydrogen concentrations, as N-H bonds, were low, in the range (2 - 5)10$+23$/ H atoms.cm$+$MIN@3$/. All samples deposited at 400 degrees Celsius are isotropic and homogeneous in hydrogen content. No absorption bands of O-H, Si-H and H$- 2$/O are detected in the range of the FTIR spectra. A Monte Carlo type model is well adapted to simulate the morphology tendencies for SiO$-x$/N$-y$/ film isotropy improvement. !14