Precursors for deposition of silicon nitride,silicon oxynitride and metal silicon oxynitrides

摘要

Precursors for the deposition of silicon nitride, silicon oxynitride and metal silicon oxynitride films, the precursors having the general formula (I) wherein R1, R2, R3, R4, R5 are selected from H and alkyl groups having (1 to 6) carbon atoms.