Effects of synchrotron x-rays on PVD deposited and ion implanted alpha -Si

摘要

We have studied the effects of intense x-ray irradiation on the stucture of amorphous Si films.The films were obtained by either physical vapor deposition or by implantation of high energy ions into crystalline Si They were exposed to different total doses of synchrotron x-rays. From the EXAFS and EXELFS measurements we find that an exposure to x-rays increases the Si coordination number.Also in the PVD films a prolonged x-ray exposure enlarges,by about 2